Surfaces, Interfaces, and Applications
- Guocai Wang
Guocai Wang
State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
More by Guocai Wang
- Lei Guo
Lei Guo
State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
More by Lei Guo
- Hua Su
Hua Su
State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
More by Hua Su
- Huaiwu Zhang
Huaiwu Zhang
State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
More by Huaiwu Zhang
- Xiaoli Tang*
Xiaoli Tang
State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
*Email: [emailprotected]
More by Xiaoli Tang
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ACS Applied Materials & Interfaces
Cite this: ACS Appl. Mater. Interfaces 2025, XXXX, XXX, XXX-XXX
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https://pubs.acs.org/doi/10.1021/acsami.5c03236
Published April 27, 2025
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The exceptional property of the interfacial Dzyaloshinskii–Moriya interaction (DMI) is an important way to develop topologically nontrivial spin textures in two-dimensional (2D) configurations. It is of great significance for the future development of fast and energy-efficient spintronic devices. Recent pioneering works have discovered the existence of interlayer DMI in multilayer films composed of two ferromagnets separated by a nonmagnetic spacer. This effect has created an exciting opportunity for the development and application of chiral effects in three-dimensional (3D) spin structures, which could become a critical component of future multilayer spintronic devices. Here, a unique asymmetric current-driven field-free magnetization switching is observed in an orthogonal magnetization system, CoFeB/Pt/CoFe/Pt. The reason for the asymmetry is attributed to the existence of interlayer DMI. Furthermore, this structure achieves an exceptional field-free switching ratio of nearly 90%. It has been verified through tilt angle measurements that the field-free switching in this system is primarily determined by the coexistence of an antisymmetric interaction, interlayer DMI, and canted magnetization. In addition, three all-electric programmable logic gates are successfully implemented by employing this asymmetric switching behavior. This research establishes a foundation for the development of logic gates and memory devices that operate fast, with low power consumption, and are all-electric controlled.
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© 2025 American Chemical Society
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- Chemical structure
- Layered materials
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- Magnetic properties
- Quantum mechanics
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ACS Applied Materials & Interfaces
Cite this: ACS Appl. Mater. Interfaces 2025, XXXX, XXX, XXX-XXX
Click to copy citationCitation copied!
Published April 27, 2025
Publication History
Received
Accepted
Revised
Published
online
© 2025 American Chemical Society
Request reuse permissions
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